	US 12,015,041 B2
	Solid-state imaging unit and electronic apparatus
Kazutaka Izukashi, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/272,875
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Sep. 4, 2019, PCT No. PCT/JP2019/034794 § 371(c)(1), (2) Date Mar. 2, 2021, PCT Pub. No. WO2020/054545, PCT Pub. Date Mar. 19, 2020.
Claims priority of application No. 2018-172282 (JP), filed on Sep. 14, 2018.
Prior Publication US 2021/0327940 A1, Oct. 21, 2021
Int. Cl. H01L 27/146 (2006.01)

CPC H01L 27/14623 (2013.01) [H01L 27/14614 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/1464 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01)]

8 Claims

1. A solid-state imaging unit, comprising:

a light receiving surface; and

two or more pixels disposed to oppose the light receiving surface, wherein the two or more pixels each include:

a photoelectric conversion section that performs photoelectric conversion on light having entered via the light receiving surface;

a charge holding section that holds a charge transferred from the photoelectric conversion section;

a transfer transistor that includes a vertical gate electrode reaching the photoelectric conversion section, the transfer transistor transferring the charge from the photoelectric conversion section to the charge holding section; and

two or more light-blocking sections disposed in layers that are provided between the light receiving surface and the charge holding section and are different from each other,

wherein the two or more light-blocking sections are provided at positions at which the two or more light-blocking sections do not block entry, into the photoelectric conversion section, of the light having entered via the light receiving surface and at which the two or more light-blocking sections do not provide a gap when viewed from the light receiving surface, and

wherein the two or more light-blocking sections include:

a first light-blocking section disposed in a layer between the photoelectric conversion section and the charge holding section, the first light-blocking section having an opening which the vertical gate electrode runs through, the first light-blocking section blocking, at a part other than the opening, entry, into the charge holding section, of the light having entered via the light receiving surface, and

a second light-blocking section disposed at a position that is in a layer between the light receiving surface and the first light-blocking section and opposes at least the opening, the second light-blocking section blocking the entry, into the charge holding section, of the light having entered via the light receiving surface.