US 12,015,026 B2
Methods of forming circuit-protection devices
Michael A. Smith, Boise, ID (US); and Kenneth W. Marr, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by MICRON TECHNOLOGY, INC., Boise, ID (US)
Filed on Sep. 13, 2021, as Appl. No. 17/473,285.
Application 17/473,285 is a division of application No. 16/543,724, filed on Aug. 19, 2019, granted, now 11,139,289.
Application 16/543,724 is a continuation of application No. 15/892,625, filed on Feb. 9, 2018, granted, now 10,431,577, issued on Oct. 1, 2019.
Claims priority of provisional application 62/611,874, filed on Dec. 29, 2017.
Prior Publication US 2021/0407989 A1, Dec. 30, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/02 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/22 (2006.01); G11C 16/26 (2006.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H10B 41/40 (2023.01); H10B 43/40 (2023.01)
CPC H01L 27/0266 (2013.01) [G11C 16/22 (2013.01); H01L 21/28035 (2013.01); H01L 21/28158 (2013.01); H01L 21/3212 (2013.01); H01L 21/823456 (2013.01); H01L 21/823462 (2013.01); H01L 21/823475 (2013.01); H01L 29/0649 (2013.01); H10B 41/40 (2023.02); H10B 43/40 (2023.02); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); H01L 21/31116 (2013.01); H01L 21/32137 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a circuit-protection device, comprising:
forming a dielectric having a first thickness, and having a second thickness greater than the first thickness, over a semiconductor;
after forming the dielectric having the first thickness and having the second thickness, forming a conductor over and in contact with the dielectric having the first thickness and having the second thickness; and
patterning the conductor to retain a portion of the conductor over a portion of the dielectric having the second thickness, and to retain substantially no portion of the conductor over a portion of the dielectric having the first thickness;
wherein the retained portion of the conductor defines a control gate of a field-effect transistor of the circuit-protection device.