US 12,015,005 B2
Semiconductor package including non-conductive film and method for forming the same
Yeongbeom Ko, Cheonan-si (KR); Wooju Kim, Asan-si (KR); Heejae Nam, Asan-si (KR); Jungseok Ryu, Asan-si (KR); and Haemin Park, Asan-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 30, 2021, as Appl. No. 17/537,994.
Claims priority of application No. 10-2021-0083093 (KR), filed on Jun. 25, 2021.
Prior Publication US 2022/0415842 A1, Dec. 29, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01)
CPC H01L 24/32 (2013.01) [H01L 25/0657 (2013.01); H01L 24/73 (2013.01); H01L 25/18 (2013.01); H01L 2224/32057 (2013.01); H01L 2224/32058 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/06513 (2013.01); H01L 2924/10156 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a substrate;
a semiconductor chip on the substrate, the semiconductor chip including
an active region, and
a scribe lane in continuity with an edge of the active region; and
a non-conductive film (NCF) between the substrate and the semiconductor chip, the non-conductive film (NCF) at least partially defining a recess region,
wherein the recess region overlaps with the scribe lane in plan view, and extends onto the active region.