US 12,014,998 B2
Semiconductor devices comprising a radar semiconductor chip and associated production methods
Ernst Seler, Munich (DE); Markus Josef Lang, Pfarrkirchen (AT); and Maciej Wojnowski, Munich (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on May 5, 2023, as Appl. No. 18/312,800.
Application 18/312,800 is a continuation of application No. 16/747,971, filed on Jan. 21, 2020, granted, now 11,658,135.
Claims priority of application No. 102019102784.5 (DE), filed on Feb. 5, 2019.
Prior Publication US 2023/0275046 A1, Aug. 31, 2023
Int. Cl. H01L 23/66 (2006.01); G01S 13/08 (2006.01); G01S 13/931 (2020.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01Q 1/22 (2006.01)
CPC H01L 23/66 (2013.01) [G01S 13/08 (2013.01); H01L 23/49816 (2013.01); H01L 24/16 (2013.01); H01Q 1/2283 (2013.01); G01S 13/931 (2013.01); H01L 2223/6622 (2013.01); H01L 2223/6633 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/16225 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate having a first surface and a second surface opposite the first surface;
a connection element, arranged on the first surface of the substrate, connecting the substrate to a printed circuit board;
a radar semiconductor chip arranged on the first surface of the substrate; and
a dielectric lens, arranged over the second surface of the substrate, configured to focus signals transmitted or received by the semiconductor device,
wherein the dielectric lens and the printed circuit board form a cavity completly enclosing the substrate, the connection element, and the radar semiconductor chip.