US 12,014,989 B2
Device and method of very high density routing used with embedded multi-die interconnect bridge
Robert Alan May, Chandler, AZ (US); Wei-Lun Kane Jen, Chandler, AZ (US); Jonathan L. Rosch, Mesa, AZ (US); Islam A. Salama, Scottsdale, AZ (US); and Kristof Darmawikarta, Chandler, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Dec. 29, 2022, as Appl. No. 18/091,048.
Application 18/091,048 is a continuation of application No. 17/888,177, filed on Aug. 15, 2022.
Application 17/888,177 is a continuation of application No. 16/322,423, granted, now 11,508,662, issued on Nov. 22, 2022, previously published as PCT/US2016/054739, filed on Sep. 30, 2016.
Prior Publication US 2023/0135165 A1, May 4, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/5381 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 21/6835 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01); H01L 24/16 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/16227 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
alternating layers of dielectric material and metal;
a bridge die above the alternating layers of dielectric material and metal;
a plurality of conductive pillars adjacent to sides of the bridge die;
a first insulating layer above the alternating layers of dielectric material and metal, the first insulating layer laterally between the plurality of conductive pillars and the bridge die;
a second insulating layer over the first insulating layer, over and in direct contact with an uppermost surface of the plurality of conductive pillars, and over the bridge die, the second insulating layer having a bottommost surface;
a plurality of vias in the second insulating layer, the plurality of vias coupled to the plurality of conductive pillars and to the bridge die, wherein the plurality of vias have a bottommost surface at a same level as the bottommost surface of the second insulating layer;
a first die coupled to the bridge die and to the plurality of conductive pillars;
a second die coupled to the bridge die and to the plurality of conductive pillars; and
a third insulating layer over the second insulating layer, the third insulating layer intervening between the second insulating layer and the first die, and the third insulating layer intervening between the second insulating layer and the second die.