	US 12,014,983 B2
	Assemblies having conductive interconnects which are laterally and vertically offset relative to one another and methods of forming assemblies having conductive interconnects which are laterally and vertically offset relative to one another
Raju Ahmed, Boise, ID (US); Radhakrishna Kotti, Boise, ID (US); David A. Kewley, Boise, ID (US); and Dave Pratt, Meridian, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Sep. 16, 2022, as Appl. No. 17/947,038.
Application 17/947,038 is a continuation of application No. 16/925,767, filed on Jul. 10, 2020, granted, now 11,482,492.
Prior Publication US 2023/0021072 A1, Jan. 19, 2023
Int. Cl. H01L 23/528 (2006.01); H01L 23/522 (2006.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01)

CPC H01L 23/528 (2013.01) [H01L 23/5226 (2013.01); H10B 61/00 (2023.02); H10B 63/84 (2023.02)]

9 Claims

1. An integrated assembly, comprising:

a base comprising circuitry;

a first memory level over the base and comprising a first conductive structure, the first conductive structure comprising a first region laterally spaced from a second region;

a first conductive interconnect coupling the first region of the first conductive structure and with the circuitry;

a second conductive interconnect extending upwardly from the second region of the first conductive structure; and

a second memory level over the first memory level and comprising a second conductive structure coupled with the circuitry through at least the first and second conductive interconnects and the first conductive structure.