US 12,014,979 B2
Methods of forming semiconductor packages
Kuo Lung Pan, Hsinchu (TW); Shu-Rong Chun, Hsinchu (TW); Teng-Yuan Lo, Hsinchu (TW); Hung-Yi Kuo, Taipei (TW); Chih-Horng Chang, Taipei (TW); Tin-Hao Kuo, Hsinchu (TW); and Hao-Yi Tsai, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 21, 2022, as Appl. No. 17/991,423.
Application 17/991,423 is a continuation of application No. 17/359,892, filed on Jun. 28, 2021, granted, now 11,508,656.
Application 17/359,892 is a continuation of application No. 16/266,446, filed on Feb. 4, 2019, granted, now 11,049,805, issued on Jun. 29, 2021.
Claims priority of provisional application 62/692,136, filed on Jun. 29, 2018.
Prior Publication US 2023/0090895 A1, Mar. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/522 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/5226 (2013.01) [H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 21/561 (2013.01); H01L 21/76837 (2013.01); H01L 21/76871 (2013.01); H01L 23/293 (2013.01); H01L 23/3107 (2013.01); H01L 23/49822 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 25/0657 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/32501 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/15311 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
performing a plasma treatment process on a dielectric layer to thin the dielectric layer and to form hydroxyl groups dangling from a surface of the dielectric layer;
adhering an integrated circuit die to the surface of the dielectric layer;
dispensing an encapsulant around the integrated circuit die and on the surface of the dielectric layer, the encapsulant comprising a nucleophile;
curing the encapsulant to form covalent bonds between the nucleophile and the hydroxyl groups; and
forming a redistribution structure on the encapsulant, the redistribution structure comprising redistribution lines connected to the integrated circuit die.