US 12,014,948 B2
Semiconductor heat treatment member and manufacturing method thereof
Sayaka Togashi, Yamagata (JP); Nobuyuki Munakata, Yamagata (JP); and Kenji Suzuki, Yamagata (JP)
Assigned to COORSTEK GK, Tokyo (JP)
Filed by CoorsTek KK, Tokyo (JP)
Filed on Dec. 15, 2021, as Appl. No. 17/552,170.
Claims priority of application No. 2020-217457 (JP), filed on Dec. 25, 2020; and application No. 2021-125049 (JP), filed on Jul. 30, 2021.
Prior Publication US 2022/0208597 A1, Jun. 30, 2022
Int. Cl. H01L 21/68 (2006.01); C01B 32/956 (2017.01); C01B 33/12 (2006.01); H01L 21/687 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/68757 (2013.01) [C01B 32/956 (2017.08); C01B 33/12 (2013.01); C01P 2006/90 (2013.01); H01L 21/67115 (2013.01); H01L 21/68735 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor heat treatment member for holding a semiconductor wafer, comprising a base member a surface of which is covered with an oxide film, the base member comprising silicon carbide, wherein a surface of a wafer holding portion to be in contact with a semiconductor wafer has an arithmetic average roughness Ra of smaller than or equal to 0.3 μm and an element average length RSm of shorter than or equal to 40 μm.