US 12,014,928 B2
Multi-layer feature fill
Xiaolan Ba, San Jose, CA (US); Ruopeng Deng, San Jose, CA (US); Juwen Gao, San Jose, CA (US); Sanjay Gopinath, Fremont, CA (US); and Lawrence Schloss, Palo Alto, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/250,503
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Jul. 31, 2019, PCT No. PCT/US2019/044541
§ 371(c)(1), (2) Date Jan. 29, 2021,
PCT Pub. No. WO2020/028587, PCT Pub. Date Feb. 6, 2020.
Claims priority of provisional application 62/712,863, filed on Jul. 31, 2018.
Prior Publication US 2021/0313183 A1, Oct. 7, 2021
Int. Cl. H01L 21/285 (2006.01); C23C 10/04 (2006.01); C23C 16/04 (2006.01); C23C 16/14 (2006.01); C23C 16/455 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC H01L 21/28568 (2013.01) [C23C 16/045 (2013.01); C23C 16/14 (2013.01); C23C 16/45527 (2013.01); C23C 16/45544 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 23/53209 (2013.01); H01L 23/53242 (2013.01); H01L 23/53257 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A method of filling a 3-D structure of a partially manufactured semiconductor substrate with a conductive material, the 3-D structure comprising sidewalls, a plurality of openings in the sidewalls leading to a plurality of features having a plurality of interior regions fluidically accessible through the openings, the method comprising:
depositing a first bulk layer of the conductive material within the 3-D structure such that the first bulk layer partially fills the plurality of interior regions of the 3-D structure;
depositing a second bulk layer of the conductive material within the 3-D structure on the first bulk layer such that the second bulk layer at least partially fills the plurality of interior regions of the 3-D structure; and
depositing a third bulk layer of the conductive material within the 3-D structure on the sidewalls, wherein the first bulk layer, second bulk layer, and third bulk layer are deposited at different conditions.