US 12,014,927 B2
Highly etch selective amorphous carbon film
Rajesh Prasad, Gloucester, MA (US); Sarah Bobek, Sunnyvale, CA (US); Prashant Kumar Kulshreshtha, San Jose, CA (US); Kwangduk Douglas Lee, Redwood City, CA (US); Harry Whitesell, Sunnyvale, CA (US); Hidetaka Oshio, Tokyo (JP); Dong Hyung Lee, Danville, CA (US); Deven Matthew Raj Mittal, Middleton, MA (US); Scott Falk, Essex, MA (US); and Venkataramana R. Chavva, Andover, MA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Oct. 11, 2022, as Appl. No. 17/963,841.
Application 17/963,841 is a continuation of application No. 16/939,316, filed on Jul. 27, 2020, granted, now 11,469,107.
Application 16/939,316 is a continuation in part of application No. 16/188,514, filed on Nov. 13, 2018, granted, now 10,727,059, issued on Jul. 28, 2020.
Claims priority of provisional application 62/593,668, filed on Dec. 1, 2017.
Prior Publication US 2023/0041963 A1, Feb. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/033 (2006.01); C23C 16/26 (2006.01); C23C 16/505 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01)
CPC H01L 21/0338 (2013.01) [C23C 16/26 (2013.01); C23C 16/505 (2013.01); C23C 16/56 (2013.01); H01L 21/02115 (2013.01); H01L 21/02274 (2013.01); H01L 21/02321 (2013.01); H01L 21/0234 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/31122 (2013.01); H01L 21/31155 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An amorphous carbon hardmask comprising:
an amorphous carbon film, wherein the amorphous carbon film further comprises a carbon dopant implanted into the amorphous carbon film and optionally an additional dopant or inert species selected from boron, nitrogen, nitrogen dimer, silicon, phosphorous, argon, helium, neon, krypton, xenon, beryllium, germanium, or combinations thereof;
wherein the amorphous carbon hardmask has a Young's modulus (GPa) of from about 70 to about 200 GPa;
wherein the amorphous carbon hardmask has a stress (MPa) of from about −600 MPa to about 0 MPa; and
wherein the amorphous carbon film comprises at least 85 atomic percentage of carbon, the carbon dopant comprising at least 1 to 30 atomic percentage of the at least 85 atomic percentage of carbon.