US 12,014,925 B2
Metal-doped carbon hardmasks
Eswaranand Venkatasubramanian, Chennai (IN); Bhaskar Jyoti Bhuyan, San Jose, CA (US); Mark J. Saly, Santa Clara, CA (US); and Abhijit Basu Mallick, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on May 25, 2021, as Appl. No. 17/330,035.
Prior Publication US 2022/0384188 A1, Dec. 1, 2022
Int. Cl. H01L 21/033 (2006.01); C23C 16/30 (2006.01); C23C 16/32 (2006.01); C23C 16/50 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/0332 (2013.01) [C23C 16/30 (2013.01); C23C 16/32 (2013.01); C23C 16/50 (2013.01); H01J 37/32449 (2013.01); H01J 37/32816 (2013.01); H01L 21/02115 (2013.01); H01L 21/02274 (2013.01); H01J 2237/332 (2013.01); H01L 21/02205 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A deposition method comprising:
delivering a ruthenium-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber, wherein at least one of the ruthenium-containing precursor or the hydrogen-containing precursor comprises carbon;
forming a plasma of all precursors within the processing region of a semiconductor processing chamber; and
depositing a ruthenium-and-carbon material on a substrate disposed within the processing region of the semiconductor processing chamber, wherein the ruthenium-and-carbon material is characterized by an as-deposited surface roughness of less than or about 1.0 nm.