US 12,014,909 B2
Plasma processing apparatus and plasma processing system
Ryoji Asakura, Tokyo (JP); Shota Umeda, Tokyo (JP); Daisuke Shiraishi, Tokyo (JP); Akira Kagoshima, Tokyo (JP); and Satomi Inoue, Tokyo (JP)
Assigned to HITACHI HIGH-TECH CORPORATION, Tokyo (JP)
Filed by Hitachi High-Tech Corporation, Tokyo (JP)
Filed on Nov. 17, 2020, as Appl. No. 16/950,179.
Application 16/950,179 is a division of application No. 15/892,041, filed on Feb. 8, 2018, granted, now 10,872,750.
Claims priority of application No. 2017-152921 (JP), filed on Aug. 8, 2017.
Prior Publication US 2021/0074528 A1, Mar. 11, 2021
Int. Cl. H01J 37/32 (2006.01); G01J 3/443 (2006.01); H01L 21/67 (2006.01)
CPC H01J 37/32926 (2013.01) [G01J 3/443 (2013.01); H01L 21/67069 (2013.01); H01L 21/67253 (2013.01); H01J 2237/334 (2013.01)] 1 Claim
OG exemplary drawing
 
1. A semiconductor device manufacturing system comprising:
a plasma processing unit that performs plasma processing of a sample;
a control unit connected via a network interface with the plasma processing unit and configured to control the plasma processing performed by the plasma processing unit on the sample; and
a state manager coupled to the control unit and configured to store a management value indicating a state of the plasma processing unit,
wherein the control unit is configured to
select one of a plurality of prediction models for predicting a result of the plasma processing for each of a plurality of divided data of the management value;
predict the result of the plasma processing by using the selected prediction model selected for each said divided data; and
cause the plasma processing unit to process the sample based on the selected prediction model selected for each said divided data, and
wherein the divided data is data divided based on a threshold of the management value.