US 12,014,907 B2
Method and device for forming graphene structure
Ryota Ifuku, Nirasaki (JP); Takashi Matsumoto, Nirasaki (JP); and Masahito Sugiura, Nirasaki (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Appl. No. 17/593,220
Filed by Tokyo Electron Limited, Tokyo (JP)
PCT Filed Feb. 26, 2020, PCT No. PCT/JP2020/007748
§ 371(c)(1), (2) Date Sep. 13, 2021,
PCT Pub. No. WO2020/189202, PCT Pub. Date Sep. 24, 2020.
Claims priority of application No. 2019-049093 (JP), filed on Mar. 15, 2019.
Prior Publication US 2022/0223407 A1, Jul. 14, 2022
Int. Cl. H01L 21/31 (2006.01); C23C 16/02 (2006.01); C23C 16/26 (2006.01); C23C 16/511 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01)
CPC H01J 37/32724 (2013.01) [C23C 16/0218 (2013.01); C23C 16/26 (2013.01); C23C 16/511 (2013.01); H01J 37/3222 (2013.01); H01J 37/32357 (2013.01); H01L 21/02115 (2013.01); H01L 21/02274 (2013.01); H01L 21/02527 (2013.01); H01L 21/0262 (2013.01); H01L 21/28556 (2013.01); H01J 2237/3321 (2013.01); H01L 21/02444 (2013.01); H01L 21/02658 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of forming a graphene structure, the method comprising:
providing a substrate;
performing a preprocessing by supplying a first processing gas including a carbon-containing gas to the substrate while heating the substrate, without using plasma; and
after the preprocessing, forming the graphene structure on a surface of the substrate through a plasma chemical vapor deposition (CVD) using plasma of a second processing gas including a carbon-containing gas,
wherein the carbon-containing gas included in the first processing gas is a hydrocarbon gas.