US 12,014,904 B2
Wafer processing apparatus
Jongchul Park, Seoul (KR); and Hyonwook Ra, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 8, 2021, as Appl. No. 17/370,766.
Claims priority of application No. 10-2020-0166005 (KR), filed on Dec. 1, 2020.
Prior Publication US 2022/0172930 A1, Jun. 2, 2022
Int. Cl. H01J 37/32 (2006.01); H01L 21/3213 (2006.01)
CPC H01J 37/32568 (2013.01) [H01J 37/32422 (2013.01); H01J 37/32715 (2013.01); H01J 37/32082 (2013.01); H01J 2237/2007 (2013.01); H01L 21/32136 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A wafer processing apparatus comprising:
a chamber body defining a plasma region configured that plasma is generated in the plasma region;
a wafer support arranged in the chamber body and configured to support a wafer;
first and second electrodes arranged between the wafer support and the plasma region and each having apertures configured to guide a path of ions of the plasma, wherein the first and second electrodes are flat and parallel to each other and the apertures of the first electrode are misaligned with the apertures of the second electrode;
a first power source configured to apply, to the first electrode, a voltage that is higher than a voltage applied to the second electrode; and
a second power source configured to apply, to the wafer support, a voltage that is higher than the voltage applied to the second electrode, wherein the wafer processing apparatus is configured that the first power source accelerates the ions to generate a plurality of reactive ion beams, each of the plurality of reactive ion beams traveling through a respective one of the apertures,
wherein a first aperture in the first electrode and a second aperture in the second electrode form a first pair of apertures, wherein the first aperture is disposed directly above the second aperture, and a third aperture in the first electrode and a fourth aperture in the second electrode form a second pair of apertures, wherein the third aperture is disposed directly above the fourth aperture, and
wherein a central direction of travel of a reactive ion beam traveling through the first pair of apertures is different from a central direction of travel of a reactive ion beam simultaneously traveling through the second pair of apertures such that the reactive ion beam traveling through the first pair of apertures intersects the reactive ion beam traveling through the second pair of apertures after passing through the first and second electrodes.