US 12,014,903 B2
Plasma processing apparatus
Tetsuo Kawanabe, Tokyo (JP); Motohiro Tanaka, Tokyo (JP); Takahiro Sakuragi, Tokyo (JP); and Kohei Sato, Tokyo (JP)
Assigned to HITACHI HIGH-TECH CORPORATION, Tokyo (JP)
Appl. No. 16/958,313
Filed by Hitachi High-Tech Corporation, Tokyo (JP)
PCT Filed Jul. 18, 2019, PCT No. PCT/JP2019/028262
§ 371(c)(1), (2) Date Jun. 26, 2020,
PCT Pub. No. WO2020/121581, PCT Pub. Date Jun. 18, 2020.
Prior Publication US 2022/0415618 A1, Dec. 29, 2022
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32449 (2013.01) [H01J 37/32082 (2013.01); H01J 37/32678 (2013.01); H01J 2237/3343 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a processing chamber in which a sample is processed by plasma; a radio frequency power supply configured to supply radio frequency power for generating plasma;
a dielectric plate disposed above the processing chamber to hermetically seal the processing chamber;
a first gas supply plate disposed below the dielectric plate and configured to supply first gas into the processing chamber; and
a sample stage on which the sample is placed, wherein
the plasma processing apparatus further comprise a second gas supply plate disposed below the first gas supply plate and configured to supply second gas into the processing chamber,
in the first gas supply plate, a plurality of first gas holes are formed penetrating a first region,
in the second gas supply plate, a plurality of second gas holes are formed penetrating a second region,
in a space between the dielectric plate and the first gas supply plate, the first gas is supplied by a first gas supply unit,
in a space between the first gas supply plate and the second gas supply plate, the second gas is supplied by a second gas supply unit,
the first region is a region of a central portion of the first gas supply plate,
the second region is a region that includes a region facing the first region and is wider than the first region,
an outer diameter of the dielectric plate is larger than an outer diameter of the first gas supply plate, and
the outer diameter of the first gas supply plate is larger than an outer diameter of the second gas supply plate,
each of the dielectric plate and the first gas supply plate includes a lower surface side comprising
a circular recess portion to enclose a region of gas holes in the lower plate;
a circumferential first groove formed in an outer circumference region of the lower surface side and constructed to provide a gas flow path;
an inner annular portion formed between the circular recess portion and the circumferential first groove to contact and be supported by the lower plate;
an outer annular portion formed adjacent to and radially outside the first circumferential groove to contact a seal included in a support member; and
a plurality of second grooves extending in a radial direction and formed in the inner annular portion and through which the circular recess portion and the circumferential first groove communicate with each other.