US 12,014,783 B2
Driving circuit for non-volatile memory
Chen-Hao Po, Hsinchu County (TW)
Assigned to EMEMORY TECHNOLOGY INC., Hsin-Chu (TW)
Filed by eMemory Technology Inc., Hsin-Chu (TW)
Filed on Aug. 2, 2022, as Appl. No. 17/878,948.
Claims priority of provisional application 63/298,202, filed on Jan. 10, 2022.
Prior Publication US 2023/0223092 A1, Jul. 13, 2023
Int. Cl. G11C 16/30 (2006.01)
CPC G11C 16/30 (2013.01) 14 Claims
OG exemplary drawing
 
1. A driving circuit connected with a non-volatile memory cell array, the driving circuit comprising:
a first conducting device, wherein a first terminal of the first conducting device is connected with a first node, and a second terminal of the first conducting device is connected with a second node;
a second conducting device, wherein a first terminal of the second conducting device is connected with a third node, and a second terminal of the second conducting device is connected with a fourth node, wherein a voltage at the fourth node is served as a driving signal, and the driving signal is transmitted to the non-volatile memory cell array;
a first transistor, wherein a first drain/source terminal of the first transistor receives a first supply voltage, a second drain/source terminal of the first transistor is connected with the first node, and a gate terminal of the first transistor is connected with the third node;
a second transistor, wherein a first drain/source terminal of the second transistor receives the first supply voltage, a second drain/source terminal of the second transistor is connected with the third node, and a gate terminal of the second transistor is connected with the first node;
a first switching device, wherein a first terminal of the first switching device is connected with the second node, a second terminal of the first switching device is connected with a fifth node, and a control terminal of the first switching device receives a first control signal;
a second switching device, wherein a first terminal of the second switching device is connected with the fourth node, a second terminal of the second switching device is connected with a sixth node, and a control terminal of the second switching device receives a second control signal;
a first selecting device, wherein a first terminal of the first selecting device is connected with the fifth node, a second terminal of the first selecting device receives a second supply voltage, a third terminal of the first selecting device receives a third supply voltage, and a control terminal of the first selecting device receives a third control signal; and
a second selecting device, wherein a first terminal of the second selecting device is connected with the sixth node, a second terminal of the second selecting device receives the second supply voltage, a third terminal of the second selecting device receives the third supply voltage, and a control terminal of the second selecting device receives a fourth control signal,
wherein the first switching device is in an open state or a close state according to the first control signal,
wherein the second switching device is in the open state or the close state according to the second control signal,
wherein one of the second supply voltage and the third supply voltage is transmitted to the fifth node through the first selecting device according to the third control signal,
wherein one of the second supply voltage and the third supply voltage is transmitted to the sixth node through the second selecting device according to the fourth control signal.