US 12,014,777 B2
Non-volatile memory and operating method thereof
Li Xiang, Wuhan (CN); and Weihua Shi, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Jan. 4, 2022, as Appl. No. 17/568,622.
Application 17/568,622 is a continuation of application No. PCT/CN2021/121714, filed on Sep. 29, 2021.
Claims priority of application No. 202011419073.6 (CN), filed on Dec. 7, 2020.
Prior Publication US 2022/0180929 A1, Jun. 9, 2022
Int. Cl. G11C 16/08 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01)
CPC G11C 16/08 (2013.01) [G11C 16/0483 (2013.01); G11C 16/24 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of operating a non-volatile memory, the non-volatile memory comprising a plurality of memory cells, and unselected word lines connected with the plurality of memory cells, the method comprising:
applying a first voltage rising at a first slope to the unselected word lines to charge the unselected word lines and to allow a second voltage on the unselected word lines to rise at a second slope, the first slope being greater than the second slope; and
stopping applying the first voltage to the unselected word lines in response to the first voltage rising at the first slope to reach a predetermined voltage, wherein the predetermined voltage is higher than a pass voltage of the plurality of memory cells connected with the unselected word lines.