US 12,014,769 B2
Volatile memory device
Jae Pil Lee, Seoul (KR); Hi Jung Kim, Hwaseong-si (KR); and Kwang Sook Noh, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 28, 2022, as Appl. No. 17/876,046.
Claims priority of application No. 10-2021-0153215 (KR), filed on Nov. 9, 2021; and application No. 10-2022-0007254 (KR), filed on Jan. 18, 2022.
Prior Publication US 2023/0144366 A1, May 11, 2023
Int. Cl. G11C 11/4091 (2006.01); G11C 11/4094 (2006.01); G11C 11/4096 (2006.01); G11C 11/4099 (2006.01)
CPC G11C 11/4091 (2013.01) [G11C 11/4094 (2013.01); G11C 11/4096 (2013.01); G11C 11/4099 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A volatile memory device comprising:
a first sense amplifier;
a second sense amplifier spaced apart from the first sense amplifier in a first direction;
a first mat disposed between the first sense amplifier and the second sense amplifier and including a first bit line connected to the first sense amplifier and a second bit line connected to the second sense amplifier;
a third sense amplifier spaced apart from the second sense amplifier in a second direction;
a fourth sense amplifier spaced apart from the third sense amplifier in the first direction; and
a second mat disposed between the third sense amplifier and the fourth sense amplifier and including a first complementary bit line connected to the first sense amplifier.