US 12,014,763 B2
Magnetic junction memory device and writing method thereof
Chan Kyung Kim, Hwaseong-si (KR); Ji Yean Kim, Hwaseong-si (KR); Hyun Taek Jung, Seoul (KR); Ji Eun Kim, Hwaseong-si (KR); Tae Seong Kim, Yongin-si (KR); Sang-Hoon Jung, Hwaseong-si (KR); and Jae Wook Joo, Daejeon (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Aug. 8, 2022, as Appl. No. 17/882,790.
Application 17/882,790 is a continuation of application No. 16/848,140, filed on Apr. 14, 2020, granted, now 11,443,791.
Claims priority of application No. 10-2019-0088383 (KR), filed on Jul. 22, 2019.
Prior Publication US 2022/0375505 A1, Nov. 24, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/16 (2006.01)
CPC G11C 11/1675 (2013.01) [G11C 11/161 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A writing method of a magnetic junction memory device which writes data to first and second magnetic junction memory cells using a global write driver and first and second local write drivers, the writing method comprising:
receiving, by the global write driver, a first write command and first write data from a host;
storing the first write data in a first write latch of the first local write driver in response to the first write command while the global write driver is receiving a second write command and second write data from the host,
writing, by the first local write driver, the first write data to the first magnetic junction memory cell in response to the first write command while the global write driver is receiving the second write command and the second write data from the host; and
writing, by the first local write driver, the first write data to the first magnetic junction memory cell in response to the first write command while the second local write driver is storing the second write data in second write latch of the second local write driver and writing the second write data to the second magnetic junction memory cell in response to the second write command.