US 12,014,762 B2
Semiconductor memory device with spin-orbit coupling channel
Rahul Mishra, Singapore (SG); Hyunsoo Yang, Singapore (SG); and Ung Hwan Pi, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR); and National University of Singapore, Singapore (SG)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 21, 2022, as Appl. No. 17/814,057.
Claims priority of application No. 10-2021-0135295 (KR), filed on Oct. 12, 2021.
Prior Publication US 2023/0110711 A1, Apr. 13, 2023
Int. Cl. G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01); H10N 52/80 (2023.01); H10N 52/85 (2023.01)
CPC G11C 11/1675 (2013.01) [G11C 11/161 (2013.01); G11C 11/1673 (2013.01); H10B 61/20 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02); H10N 52/80 (2023.02); H10N 52/85 (2023.02); G11C 11/1655 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor memory device, comprising:
data storage patterns having respective first sides and respective second sides;
a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, wherein the SOC channel layer is configured to provide a spin-orbit torque to the data storage patterns;
read access transistors connected between the second sides of respective ones of the data storage patterns and respective data lines;
a write access transistor connected between a first end of the SOC channel layer and a source line; and
a bit line connected to a second end of the SOC channel layer,
wherein each of the data storage patterns comprises a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.