CPC G06F 1/206 (2013.01) [H05K 1/0203 (2013.01); H05K 7/20272 (2013.01); H05K 2201/10159 (2013.01); H05K 2201/10219 (2013.01); H05K 2201/10522 (2013.01)] | 16 Claims |
1. A system comprising:
a memory sub-system comprising:
a plurality of memory devices encased in respective packages; and
a processing device, coupled to the plurality of memory devices;
a thermoelectric component (TEC) directly coupled to respective external surfaces of the plurality of memory devices encased in respective packages; and
a heat sink component directly coupled to the TEC, wherein a first surface of the TEC is directly coupled to the respective external surfaces of the respective packages, and wherein a second surface of the TEC, opposite the first surface, is coupled to the heat sink component, the heat sink component to absorb thermal energy from the second surface of the TEC, and wherein the processing device of the memory sub-system is to perform operations comprising:
receiving event information associated with an event that corresponds to a temperature of the memory sub-system, wherein receiving the event information associated with the event comprises receiving an indication of a number of logical block addresses at which a memory operation at the memory sub-system is to be performed;
determining whether the event information associated with the event satisfies a threshold condition, wherein determining whether the event information associated with the event satisfies the threshold condition comprises:
comparing the number of logical block addresses to a number threshold condition; and
determining whether the number of logical block addresses meets or exceeds the number threshold condition in view of the comparing; and
responsive to determining that the event information associated with the event satisfies the threshold condition, causing a voltage signal to be applied to the TEC, the voltage signal to cause the TEC to transfer thermal energy between the TEC and the plurality of memory devices via thermal conduction.
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