CPC G03F 7/32 (2013.01) [G03F 7/027 (2013.01); G03F 7/0397 (2013.01); G03F 7/322 (2013.01); G03F 7/40 (2013.01); G03F 7/70925 (2013.01); H01L 21/0206 (2013.01)] | 34 Claims |
1. A method for manufacturing an electronic device, the method comprising performing a treatment using a treatment liquid for manufacturing a semiconductor, the treatment liquid for manufacturing a semiconductor comprising:
a quaternary ammonium compound represented by the following Formula (N);
at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent;
water; and
one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn,
wherein a ratio T1 of a total mass of the metal atoms to the sum of a total mass of the additive and the total mass of the metal atoms as defined by the following formula is in a range from 1 ppt to 1 ppm,
T1=[total mass of the metal atoms]/([total mass of the additive]+[total mass of the metal atoms]),
![]() in Formula (N), RN1 to RN4 each independently represent an alkyl group, a phenyl group, a benzyl group, or a cyclohexyl group, and the alkyl group, the phenyl group, the benzyl group, or the cyclohexyl group may have a substituent.
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