US 12,013,641 B2
Method of reducing undesired light influence in extreme ultraviolet exposure
Chih-Tsung Shih, Hsinchu (TW); Chen-Ming Wang, Kaohsiung (TW); Yahru Cheng, Taipei (TW); Bo-Tsun Liu, Taipei (TW); and Tsung Chuan Lee, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 27, 2022, as Appl. No. 17/875,282.
Application 17/875,282 is a division of application No. 16/663,237, filed on Oct. 24, 2019, granted, now 11,703,762.
Claims priority of provisional application 62/753,910, filed on Oct. 31, 2018.
Prior Publication US 2022/0373890 A1, Nov. 24, 2022
Int. Cl. G03F 7/11 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/38 (2006.01)
CPC G03F 7/11 (2013.01) [G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/38 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A control system for generating a layout pattern on a photoresist material, comprising:
a main controller; and
an analyzer module coupled to the main controller, wherein the analyzer module is configured to receive a layout pattern and information of the photoresist material, wherein the layout pattern is produced by radiation from an extreme ultraviolet (EUV) radiation source in the photoresist material on a wafer, and wherein the analyzer module is configured to:
select a wavelength of an out-of-band deep ultraviolet (DUV) radiation of the EUV radiation source;
determine a first thickness of a top layer based on the selected wavelength, the first thickness of the top layer is configured to make the top layer opaque for the selected wavelength of the DUV radiation and to make the top layer transparent for EUV radiation;
wherein the main controller is configured to:
control the disposing a photoresist layer of a photoresist material on a semiconductor substrate;
control the disposing the top layer having the first thickness over of the photoresist layer; and
control the irradiating the photoresist layer with radiation generated from the EUV radiation source, wherein the radiation is configured to pass through the top layer to expose the photoresist layer.