	US 12,013,640 B2
	Resist underlayer film material, patterning process, and method for forming resist underlayer film
Takayoshi Nakahara, Joetsu (JP); Takeru Watanabe, Joetsu (JP); Daisuke Kori, Joetsu (JP); Yusuke Biyajima, Joetsu (JP); and Tsutomu Ogihara, Joetsu (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed by SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed on May 25, 2021, as Appl. No. 17/329,767.
Claims priority of application No. 2020-102117 (JP), filed on Jun. 12, 2020.
Prior Publication US 2021/0397092 A1, Dec. 23, 2021
Int. Cl. G03F 7/11 (2006.01); C07C 233/18 (2006.01); C07C 233/47 (2006.01); C07C 233/55 (2006.01); C07D 251/34 (2006.01); C07D 487/04 (2006.01); C08F 38/00 (2006.01); C09D 149/00 (2006.01); G03F 7/09 (2006.01)

CPC G03F 7/11 (2013.01) [C07C 233/18 (2013.01); C07C 233/47 (2013.01); C07C 233/55 (2013.01); C07D 251/34 (2013.01); C07D 487/04 (2013.01); C08F 38/00 (2013.01); C09D 149/00 (2013.01); G03F 7/094 (2013.01); C07C 2603/18 (2017.05)]

19 Claims

1. A resist underlayer film material used in a multilayer resist method, comprising:

(A) at least one compound shown by the following general formula (1); and

(B) an organic solvent,

wherein X independently represents a monovalent organic group shown by the following general formula (2); W represents an organic group with a valency of “n” having 2 to 60 carbon atoms, and containing an “m” number of partial structures each independently shown by the following general formula (4) or (5); and “m” and “n” each represent an integer of 1 to 10,

wherein a broken line represents a bonding arm; Z represents an aromatic group with a valency of (k+1) having 6 to 20 carbon atoms; A represents a single bond or —O—(CH₂)_p—; “k” represents an integer of 1 to 5; and “p” represents an integer of 1 to 10,

wherein broken lines represent bonding arms; R⁰¹represents a hydrogen atom or a monovalent alkyl group having 1 to 10 carbon atoms; and R⁰²represents a hydrogen atom or a monovalent alkyl group having 1 to 20 carbo atoms.