US 12,012,660 B2
Method for manufacturing LCP-based flexible copper-clad plate, and article thereof
Nianqun Yang, Zhuhai (CN); Zhigang Yang, Zhuhai (CN); Zhiqiang Zhang, Zhuhai (CN); and Honglin Song, Zhuhai (CN)
Assigned to Richview Electronics Co., Ltd., Wuhan (CN)
Appl. No. 17/042,337
Filed by Richview Electronics Co., Ltd., Wuhan (CN)
PCT Filed Mar. 20, 2019, PCT No. PCT/CN2019/078909
§ 371(c)(1), (2) Date Sep. 28, 2020,
PCT Pub. No. WO2019/184785, PCT Pub. Date Oct. 3, 2019.
Claims priority of application No. 201810291943.2 (CN), filed on Mar. 30, 2018.
Prior Publication US 2021/0025061 A1, Jan. 28, 2021
Int. Cl. C23F 17/00 (2006.01); C23C 14/02 (2006.01); C23C 14/20 (2006.01); C23C 14/35 (2006.01); C23C 14/48 (2006.01); C25D 3/38 (2006.01)
CPC C23F 17/00 (2013.01) [C23C 14/022 (2013.01); C23C 14/024 (2013.01); C23C 14/205 (2013.01); C23C 14/35 (2013.01); C23C 14/48 (2013.01); C25D 3/38 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A method for manufacturing an LCP-based flexible copper-clad laminate, comprising:
providing an LCP substrate, and subjecting the LCP substrate to a Hall ion source pre-treatment, to clean a surface of the LCP substrate;
implanting first metal ions into the LCP substrate via ion implantation, to form an ion-implanted layer in a certain depth range below the surface of the LCP substrate;
performing plasma deposition on the LCP substrate subjected to the ion implantation, to deposit second metal ions onto the ion-implanted layer and form a plasma deposition layer;
performing magnetron sputtering deposition to deposit copper ions onto the plasma deposition layer and form a magnetron sputtering deposition layer; and
plating the magnetron sputtering deposition layer with a thickened copper layer to obtain the LCP-based flexible copper-clad laminate,
wherein a temperature of the LCP substrate is controlled to be always lower than 200° C. during the process of manufacturing the LCP-based flexible copper-clad laminate; and
wherein during the ion implantation, an ion implantation voltage is set to 10 kV to 20 kV, an ion implantation current is set to 1 mA to 4 mA, and an implantation time is set to 40 s to 3 min.