US 12,012,652 B2
Single process volume to perform high-pressure and low-pressure processes with features to reduce cross-contamination
Kelvin Chan, San Ramon, CA (US); Yang Guo, Fremont, CA (US); Ashish Goel, Sunnyvale, CA (US); Anantha Subramani, San Jose, CA (US); and Philip Allan Kraus, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Apr. 25, 2019, as Appl. No. 16/395,015.
Claims priority of provisional application 62/674,318, filed on May 21, 2018.
Prior Publication US 2019/0352774 A1, Nov. 21, 2019
Int. Cl. H01J 37/32 (2006.01); C23C 14/34 (2006.01); C23C 16/40 (2006.01); C23C 16/44 (2006.01); C23C 28/04 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01)
CPC C23C 16/4402 (2013.01) [C23C 14/34 (2013.01); C23C 16/402 (2013.01); C23C 16/405 (2013.01); C23C 16/4409 (2013.01); C23C 28/042 (2013.01); H01J 37/3244 (2013.01); H01J 37/32715 (2013.01); H01J 37/32871 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/28568 (2013.01); H01J 2237/20235 (2013.01); H01J 2237/3321 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A processing tool comprising:
a chamber body;
a pedestal in the chamber body, wherein the pedestal is displaceable between an upper processing location and a lower processing location, and wherein the pedestal has a first surface and a second surface opposite and below the first surface;
a first gas port for supplying gasses into the chamber body, wherein the first gas port passes through a top surface of the chamber body;
a first exhaust positioned above the first surface of the pedestal, wherein the first exhaust passes through a sidewall of the chamber body;
a second gas port for supplying gasses into the chamber body, wherein the second gas port passes through a bottom surface of the chamber body, the bottom surface opposite the top surface, wherein the second gas port vertically overlaps with the first gas port, and wherein the pedestal extends vertically over the second gas port; and
a second exhaust below the first exhaust, the second exhaust positioned below the second surface of the pedestal when the pedestal is in the lower processing location, wherein the processing tool is configured to process a substrate in the upper processing location with a first processing operation at a first pressure to form a first film on the substrate, and then to process the substrate in the lower processing location with a second processing operation at a second pressure to form a second film on the substrate, the second pressure lower than the first pressure.