US 12,011,679 B2
Single layer nanofluidic separator chip and fluidic processor
Stacey Gifford, Yorktown Heights, NY (US); Sung-Cheol Kim, Yorktown Heights, NY (US); Joshua Smith, Yorktown Heights, NY (US); and Benjamin Wunsch, Yorktown Heights, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Nov. 17, 2017, as Appl. No. 15/815,846.
Prior Publication US 2019/0151774 A1, May 23, 2019
Int. Cl. B01D 17/02 (2006.01); B01D 21/00 (2006.01); B01D 21/24 (2006.01); B03B 5/00 (2006.01); B82Y 99/00 (2011.01); G01N 30/00 (2006.01); G01N 30/60 (2006.01)
CPC B01D 17/02 (2013.01) [B01D 21/0087 (2013.01); B01D 21/2444 (2013.01); B03B 5/00 (2013.01); G01N 30/0005 (2013.01); B82Y 99/00 (2013.01); G01N 30/6095 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A fluidic processor device including an input through-surface-via (TSV), a product TSV, a drain TSV, two sets of bussing channels, an inlet injection port channel, a product access port channel, a drain access port channel and a fastener, the fluidic processor device comprising:
a nanofluidic separator chip including a nanofluidic deterministic lateral displacement (nanoDLD) array;
a housing, for housing the nanofluidic separator chip, including:
a top plate disposed on a top side of the nanofluidic separator chip;
a bottom plate disposed on a back side of the nanofluidic separator chip; and
a first spacer and a second spacer disposed between the nanofluidic separator chip and the bottom plate;
a first chamber that stores a drain fluid which flows through the nanoDLD array via the drain TSV and that is:
geometrically aligned about a center axis of the first chamber with the drain TSV and the nanoDLD array; and
located between inner edges of the first spacer; and
a second chamber that stores an output product which flows through the product TSV and that is:
geometrically aligned about a center axis of the second chamber with the product TSV; and
positioned between inner edges of the second spacer.