US 12,336,434 B2
Piezoelectric film layered structure and method for producing thereof
Akihiko Teshigahara, Nisshin (JP); and Tetsuya Enomoto, Nisshin (JP)
Assigned to DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); and MIRISE Technologies Corporation, Nisshin (JP)
Filed by DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); and MIRISE Technologies Corporation, Nisshin (JP)
Filed on Dec. 20, 2021, as Appl. No. 17/555,607.
Claims priority of application No. 2021-015022 (JP), filed on Feb. 2, 2021.
Prior Publication US 2022/0246833 A1, Aug. 4, 2022
Int. Cl. H10N 30/853 (2023.01); H10N 30/093 (2023.01)
CPC H10N 30/853 (2023.02) [H10N 30/093 (2023.02)] 5 Claims
OG exemplary drawing
 
1. A piezoelectric film layered structure, comprising:
a base; and
a ScAlN film formed on the base, wherein
the ScAlN film has an unpaired electron density within a range between 1.7×1018 electrons/cm3, inclusive, and 1.1×1019 electrons/cm3, inclusive.