US 12,336,424 B2
Light emitting panel, display apparatus, and manufacturing method of light emitting panel
Wenhai Mei, Beijing (CN); and Yichi Zhang, Beijing (CN)
Assigned to BOE Technology Group Co., Ltd., Beijing (CN)
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
Filed on Aug. 13, 2021, as Appl. No. 17/402,112.
Claims priority of application No. 202011024920.9 (CN), filed on Sep. 25, 2020.
Prior Publication US 2022/0102661 A1, Mar. 31, 2022
Int. Cl. H01L 51/50 (2006.01); H10K 50/11 (2023.01); H10K 50/16 (2023.01); H10K 50/17 (2023.01); H10K 71/00 (2023.01); H10K 71/15 (2023.01); H10K 85/60 (2023.01); H10K 101/40 (2023.01)
CPC H10K 85/615 (2023.02) [H10K 50/11 (2023.02); H10K 50/16 (2023.02); H10K 50/17 (2023.02); H10K 50/171 (2023.02); H10K 71/00 (2023.02); H10K 71/15 (2023.02); H10K 2101/40 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A light emitting panel, comprising: a substrate, at least two electrode layers arranged on one side of the substrate, and a light emitting layer arranged between the two electrode layers; wherein
an interfacial modification layer is arranged on one side of at least one of the electrode layers facing the light emitting layer; the interfacial modification layer comprises a polycyclic structure, a first electriferous group connected to a side of the polycyclic structure facing away from the light emitting layer, and a second electriferous group connected to a side of the polycyclic structure facing the light emitting layer; and charges of the first electriferous group and the second electriferous group are different, so that the interfacial modification layer has a dipole moment, and therefore a work function of the electrode layers in contact with the interfacial modification layer is adjusted;
wherein each of the electrode layers comprises a cathode layer, the interfacial modification layer is arranged on a side of the cathode layer facing the light emitting layer, and an electron transfer layer is arranged between the interfacial modification layer and the light emitting layer;
in response to a work function of the cathode layer being higher than an LUMO energy level of the electron transfer layer, and an absolute value of a difference between the work function of the cathode layer and the LUMO energy level of the electron transfer layer being greater than a first threshold value, the interfacial modification layer is configured to decrease the work function of the cathode layer, the first electriferous group is an electronegative group, and the second electriferous group is an electropositive group;
or
each of the electrode layers comprises an anode layer, the interfacial modification layer is arranged on a side of the anode layer facing the light emitting layer, and a hole injection layer is arranged between the interfacial modification layer and the light emitting layer;
in response to a work function of the anode layer being higher than an HOMO energy level of the hole injection layer, and an absolute value of a difference between the work function of the anode layer and the HOMO energy level of the hole injection layer being greater than a third threshold value, the interfacial modification layer is configured to decrease the work function of the anode layer, the first electriferous group is an electronegative group, and the second electriferous group is an electropositive group.