US 12,336,404 B2
Display panel and display device including blocker
Li Wang, Beijing (CN); Long Han, Beijing (CN); Jie Zhang, Beijing (CN); Tian Dong, Beijing (CN); Bo Wang, Beijing (CN); and Jingquan Wang, Beijing (CN)
Assigned to BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Filed on Apr. 25, 2024, as Appl. No. 18/645,555.
Application 18/645,555 is a continuation of application No. 17/615,950, granted, now 11,997,898, previously published as PCT/CN2020/140199, filed on Dec. 28, 2020.
Prior Publication US 2024/0276815 A1, Aug. 15, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G09G 3/32 (2016.01); G09G 3/3233 (2016.01); G09G 3/3266 (2016.01); G09G 3/3275 (2016.01); H10K 59/121 (2023.01); H10K 59/131 (2023.01); G06F 3/00 (2006.01); G06F 3/033 (2013.01); H10K 102/00 (2023.01)
CPC H10K 59/131 (2023.02) [G09G 3/3233 (2013.01); G09G 3/3266 (2013.01); G09G 3/3275 (2013.01); H10K 59/121 (2023.02); G06F 3/00 (2013.01); G06F 3/033 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2300/0861 (2013.01); G09G 2320/0214 (2013.01); G09G 2320/0247 (2013.01); G09G 2330/02 (2013.01); G09G 2330/021 (2013.01); H10K 2102/302 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A display panel, comprising:
a base substrate;
a pixel unit, located on the base substrate and comprising a pixel circuit and a light-emitting element, the pixel circuit being configured to drive the light-emitting element, the pixel circuit comprising a driving transistor and a threshold compensation transistor, a first electrode of the threshold compensation transistor being connected with a second electrode of the driving transistor, a second electrode of the threshold compensation transistor being connected with a gate electrode of the driving transistor;
a first power line, configured to supply a first power supply voltage to the pixel circuit;
a blocker, electrically connected with the first power line; and
a first conductive structure, connected with the gate electrode of the driving transistor,
wherein the threshold compensation transistor comprises a first channel and a second channel, and the first channel and the second channel are connected by a conductive connection portion;
an orthographic projection of the blocker on the base substrate at least partially overlaps with an orthographic projection of the conductive connection portion on the base substrate;
an orthographic projection of the first conductive structure on the base substrate at least partially overlaps with the orthographic projection of the blocker on the base substrate;
an area of an orthographic projection of a portion of the blocker overlapping with the first conductive structure on the base substrate is larger than an area of an orthographic projection of a portion of the blocker overlapping with the conductive connection portion on the base substrate,
wherein the blocker comprises a first portion, a second portion, and a third portion, the first portion extends along a first direction, the second portion extends along a second direction, and the third portion extends along the first direction, and the first portion and the third portion are connected through the second portion, and the first portion and the second portion form an inverted T-shape.