US 12,336,386 B2
Display substrate and manufacturing method thereof, and display device
Qiuhua Meng, Beijing (CN); Ming Liu, Beijing (CN); and Yang Yu, Beijing (CN)
Assigned to BOE Technology Group Co., Ltd., Beijing (CN)
Appl. No. 17/608,120
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed Dec. 21, 2020, PCT No. PCT/CN2020/137943
§ 371(c)(1), (2) Date Nov. 1, 2021,
PCT Pub. No. WO2022/133640, PCT Pub. Date Jun. 30, 2022.
Prior Publication US 2023/0307466 A1, Sep. 28, 2023
Int. Cl. H10K 59/121 (2023.01); H10D 86/01 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 59/124 (2023.01)
CPC H10K 59/1213 (2023.02) [H10D 86/0221 (2025.01); H10D 86/423 (2025.01); H10D 86/431 (2025.01); H10D 86/451 (2025.01); H10D 86/60 (2025.01); H10K 59/124 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A display substrate, comprising a base substrate, and a first thin film transistor and a second thin film transistor formed on the base substrate, wherein a first active layer of the first thin film transistor is made of low-temperature polysilicon, and a second active layer of the second thin film transistor is made of metal oxide, and the display substrate further comprises a first barrier layer on a side of the second active layer close to the base substrate and a second barrier layer on a side of the second active layer away from the base substrate, and an orthographic projection of the second active layer onto the base substrate falls within an orthographic projection of the first barrier layer onto the base substrate, the orthographic projection of the second active layer onto the base substrate falls within an orthographic projection of the second barrier layer onto the base substrate, and orthographic projections of electrodes of the second thin film transistor onto the base substrate all fall within the orthographic projection of the first barrier layer onto the base substrate and orthographic projections of electrodes of the second thin film transistors onto the base substrate all fall within the orthographic projection of the second barrier layer onto the base substrate;
wherein an orthographic projection of the first active layer onto the base substrate does not overlap the orthographic projection of the first barrier layer onto the base substrate, and the orthographic projection of the first active layer onto the base substrate does not overlap the orthographic projection of the second barrier layer onto the base substrate.