US 12,336,385 B2
Display device and method of manufacturing display device
Keunwoo Kim, Seongnam-si (KR); and Taewook Kang, Seongnam-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do (KR)
Filed by Samsung Display Co., Ltd., Yongin-Si (KR)
Filed on Jan. 4, 2022, as Appl. No. 17/568,242.
Claims priority of application No. 10-2021-0052410 (KR), filed on Apr. 22, 2021.
Prior Publication US 2022/0344424 A1, Oct. 27, 2022
Int. Cl. H10K 59/121 (2023.01); H10K 59/12 (2023.01); H10K 59/131 (2023.01); H10K 71/00 (2023.01)
CPC H10K 59/1213 (2023.02) [H10K 59/1216 (2023.02); H10K 59/131 (2023.02); H10K 71/00 (2023.02); H10K 59/1201 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A display device comprising:
a substrate including a sub-pixel area;
an active layer disposed in the sub-pixel area on the substrate, the active layer including:
first, second, and third regions;
a first channel region disposed between the first and second regions; and
a second channel region disposed between the second and third regions;
a first gate electrode disposed in the first and second channel regions on the active layer, and constituting a dual gate transistor together with the first and second regions and the first channel region and together with the second and third regions and the second channel region;
a first gate insulating layer disposed between the active layer and the first gate electrode, and defining an opening which exposes the second region of the active layer;
an insulating pattern disposed in the opening;
a gate electrode pattern contacting a first surface of the insulating pattern opposite to a second surface of the insulating pattern facing the substrate, spaced apart from the first gate electrode, and constituting a capacitor together with the second region; and
a light emitting structure disposed on the dual gate transistor and the gate electrode pattern.