US 12,336,370 B2
Light-emitting diode and method for producing same
Young Woo Heo, Daegu (KR); Hyeok Kim, Seoul (KR); Joon Hyung Lee, Daegu (KR); Jeong Joo Kim, Daegu (KR); Sang Wook Lee, Daegu (KR); Jeong Woo Han, Gyeongsangbuk-do (KR); Sang Hyub Kim, Seoul (KR); and Chang Hee Lee, Seoul (KR)
Assigned to KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, Daegu (KR); and SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR)
Appl. No. 17/618,392
Filed by KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, Daegu (KR); and SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR)
PCT Filed Jun. 10, 2020, PCT No. PCT/KR2020/007535
§ 371(c)(1), (2) Date Dec. 10, 2021,
PCT Pub. No. WO2020/251262, PCT Pub. Date Dec. 17, 2020.
Claims priority of application No. 10-2019-0068913 (KR), filed on Jun. 11, 2019.
Prior Publication US 2022/0278297 A1, Sep. 1, 2022
Int. Cl. H10K 50/16 (2023.01); H10K 59/38 (2023.01); H10K 71/00 (2023.01); H10K 102/10 (2023.01)
CPC H10K 50/167 (2023.02) [H10K 59/38 (2023.02); H10K 71/00 (2023.02); H10K 2102/102 (2023.02); H10K 2102/103 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A light emitting diode comprising:
a first electrode and a second electrode that are opposite to each other;
a light emitting layer that is located between the first electrode and the second electrode and includes a quantum dot; and
an electron transport layer that is arranged between the first electrode and the light emitting layer and includes a metal oxide thin film,
wherein the metal oxide thin film has a composition selected from a group of chemical formulas consisting of:
(1-y)[(1-x)(In2O3)—xZnO]—ySiO2  [Chemical Formula 1]
wherein, in chemical formula 1, 0<x<1 and 0.03≤y<0.29, and
(1-y)[(1-x)(In2O3)—xSnO2]—ySiO2  [Chemical Formula 2]
wherein, in chemical formula 2, 0<x<1 and 0.14≤y<0.54.