US 12,336,366 B2
Electrode structure and quantum dot electroluminescent device
Hsueh-Shih Chen, Hsinchu (TW); and Shuan Yang, Hsinchu (TW)
Assigned to NATIONAL TSING HUA UNIVERSITY, Hsinchu (TW)
Filed by NATIONAL TSING HUA UNIVERSITY, Hsinchu (TW)
Filed on Sep. 22, 2022, as Appl. No. 17/950,170.
Claims priority of application No. 111118543 (TW), filed on May 18, 2022.
Prior Publication US 2023/0380201 A1, Nov. 23, 2023
Int. Cl. H10K 50/115 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 102/00 (2023.01)
CPC H10K 50/115 (2023.02) [H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 2102/00 (2023.02)] 18 Claims
OG exemplary drawing
 
1. An electrode structure for being integrated in an electronic component, comprising:
a seed layer, being connected to a functional material layer in the electronic component;
an electrode layer, being formed on the seed layer, and comprising a main film made of Ag and a dopant enclosed in the main film; and
a capping layer, being formed on the electrode layer;
wherein the dopant is Cu, and an amount of the dopant being in a range between 0.1% and 20%.