US 12,336,341 B2
Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element
Noritaka Niwa, Ishikawa (JP); Tetsuhiko Inazu, Ishikawa (JP); and Haruhisa Aida, Ishikawa (JP)
Assigned to NIKKISO CO., LTD., Tokyo (JP)
Filed by NIKKISO CO., LTD., Tokyo (JP)
Filed on Jul. 28, 2022, as Appl. No. 17/876,197.
Claims priority of application No. 2021-126105 (JP), filed on Jul. 30, 2021.
Prior Publication US 2023/0029549 A1, Feb. 2, 2023
Int. Cl. H10H 20/841 (2025.01); H10H 20/01 (2025.01); H10H 20/825 (2025.01); H10H 20/832 (2025.01)
CPC H10H 20/841 (2025.01) [H10H 20/01335 (2025.01); H10H 20/032 (2025.01); H10H 20/832 (2025.01); H10H 20/034 (2025.01); H10H 20/825 (2025.01)] 6 Claims
OG exemplary drawing
 
1. A semiconductor light-emitting element comprising:
an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material;
an active layer provided on the n-type semiconductor layer and made of an AlGaN-based semiconductor material;
a p-type semiconductor layer provided on the active layer;
a p-side contact electrode that includes a Rh layer in contact with an upper surface of the p-type semiconductor layer;
a p-side electrode covering layer that is in contact with an upper surface and a side surface of the p-side contact electrode and includes a Ti layer, a Rh layer, and a TiN layer stacked successively;
a dielectric covering layer that has a connection opening provided on the p-side electrode covering layer and covers the p-side electrode covering layer in a portion different from the connection opening; and
a p-side current diffusion layer that connects to the p-side electrode covering layer in the connection opening.