| CPC H10H 20/821 (2025.01) [H01L 25/0753 (2013.01); H10H 20/816 (2025.01); H10H 20/8314 (2025.01); H10H 20/84 (2025.01)] | 15 Claims |
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1. A micro light-emitting diode, comprising:
an epitaxial structure comprising a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer, and having a first ion implantation region, wherein the light-emitting layer is located between the first type semiconductor layer and the second type semiconductor layer, the first type semiconductor layer, the light-emitting layer, and a first portion of the second type semiconductor layer constitute a mesa, a second portion of the second type semiconductor layer forms a concavity relative to the mesa, the first ion implantation region has a first inner side and a first bottom side connected to the first inner side, a first distance is present between a surface of the first type semiconductor layer and a top surface of the light-emitting layer adjacent to the surface, a second distance is present between the surface of the first type semiconductor layer and the first bottom side of the first ion implantation region, the second distance is greater than the first distance and less than a height of the mesa, a first included angle is present between a first extension direction of the first inner side of the first ion implantation region and a normal direction of the light-emitting layer, and an absolute value of the first included angle is between 0 degree and 15 degrees; and
an insulating layer disposed on the epitaxial structure and covering a periphery of the first type semiconductor layer and part of the surface, a periphery of the light-emitting layer, and part of a periphery of the second type semiconductor layer.
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