| CPC H10H 20/821 (2025.01) [H10H 20/812 (2025.01); H10H 20/815 (2025.01); H10H 20/825 (2025.01)] | 20 Claims |
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1. A light emitting diode, comprising:
a semiconductor layer stack comprising:
a first conductivity type semiconductor layer including a first side and a second side;
a V-pit generation layer disposed on the first side of the first conductivity type semiconductor layer and having a first V-pit of a first inlet width;
a stress relief layer disposed on the V-pit generation layer and providing a second V-pit of a second inlet width greater than the first inlet width of the first V-pit;
an active layer disposed on the stress relief layer and including a first active layer region formed on a flat surface of the stress relief layer and a second active layer region formed in the second V-pit; and
a second conductivity type semiconductor layer disposed on the active layer,
wherein light emitted through the first conductivity type semiconductor layer or the second conductivity type semiconductor layer includes light having at least two distinct peak wavelengths, and
wherein a distance between a peak point at which an intensity of secondary ions of aluminum is highest in the semiconductor stack and an intersection point at which an intensity of secondary ions of indium in the semiconductor layer stack first drops below a base level of 1E+03 count/sec in a direction from the active layer toward the first conductivity type semiconductor layer is greater than a distance between the intersection point and a midpoint of a rising intensity of secondary ions of silicon corresponding to the first side of the first conductivity type semiconductor layer.
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