US 12,336,329 B2
Infrared light-emitting diode
Chunfu Tsai, Tianjin (CN); and Chihhung Hsiao, Tianjin (CN)
Assigned to TIANJIN SANAN OPTOELECTRONICS CO., LTD., Tianjin (CN)
Filed by TIANJIN SANAN OPTOELECTRONICS CO., LTD., Tianjin (CN)
Filed on May 2, 2024, as Appl. No. 18/653,040.
Application 18/653,040 is a continuation of application No. 17/354,022, filed on Jun. 22, 2021, granted, now 12,009,453.
Application 17/354,022 is a continuation in part of application No. PCT/CN2019/121018, filed on Nov. 26, 2019.
Prior Publication US 2024/0282887 A1, Aug. 22, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10H 20/812 (2025.01); H10H 20/82 (2025.01); H10H 20/824 (2025.01); H10H 20/831 (2025.01); H10H 20/85 (2025.01)
CPC H10H 20/812 (2025.01) [H10H 20/82 (2025.01); H10H 20/824 (2025.01); H10H 20/831 (2025.01); H10H 20/8506 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An infrared light-emitting diode (LED), comprising
a semiconductor light-emitting unit which includes:
an active layer having a quantum well structure which includes at least one pair of layers, each pair of layers including a well layer and a barrier layer;
a first waveguide layer and a second waveguide layer respectively disposed on two opposite sides of said active layer, and independently made of a semiconductor compound represented by (AlX3Ga1-X3)Y1In1-Y1P, wherein 0≤X3≤1 and 0<Y1≤1;
a first cladding layer disposed on said first waveguide layer opposite to said active layer;
a second cladding layer disposed on said second waveguide layer opposite to said active layer; and
a current spreading layer disposed on said first cladding layer opposite to said first waveguide layer, and having a roughened surface opposite to said semiconductor light-emitting unit,
a substrate which is light-transmissive and which is bonded to said current spreading layer opposite to said semiconductor light-emitting unit, and
a bonding layer which is light-transmissive and which is disposed between said roughened surface of said current spreading layer and said substrate to bond therewith,
wherein said barrier layer is made of a semiconductor compound represented by (AlX2Ga1-X2)As, wherein 0≤X2≤1.