US 12,336,328 B2
High color gamut photoluminescence wavelength converted white light emitting devices
Yi-Qun Li, Danville, CA (US)
Assigned to Intematix Corporation, Fremont, CA (US)
Appl. No. 17/770,931
Filed by INTEMATIX CORPORATION, Fremont, CA (US)
PCT Filed Oct. 23, 2020, PCT No. PCT/US2020/057226
§ 371(c)(1), (2) Date Apr. 21, 2022,
PCT Pub. No. WO2021/081455, PCT Pub. Date Apr. 29, 2021.
Claims priority of provisional application 62/924,747, filed on Oct. 23, 2019.
Prior Publication US 2022/0352416 A1, Nov. 3, 2022
Int. Cl. H10H 20/812 (2025.01); H10H 20/851 (2025.01)
CPC H10H 20/812 (2025.01) [H10H 20/8512 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A light emitting device comprising:
a dual-wavelength Light Emitting Diode (LED) chip; and
a manganese-activated fluoride phosphor comprising at least one of: K2SiF6:Mn4+, K2TiF6:Mn4+ and K2GeF6:Mn4+ for generating light with a peak emission wavelength from 620 nm to 660 nm; and
wherein the dual-wavelength LED chip comprises a first p-n junction diode comprising a first Multiple Quantum Well structure for generating a first light with a dominant wavelength from 440 nm to 470 nm and a full width at half maximum emission intensity from 15 nm to 25 nm and a second p-n junction diode comprising a second Multiple Quantum Well structure for generating a second light with a dominant wavelength from 520 nm to 540 nm and a full width at half maximum emission intensity from 15 nm to 25 nm.