US 12,336,319 B2
Germanium single-crystal wafer, method for preparing germanium single-crystal wafer, method for preparing crystal bar, and use of single-crystal wafer
Rajaram Shetty, Fremont, CA (US); Yuanli Wang, Beijing (CN); Weiguo Liu, Fremont, CA (US); Yvonne Zhou, Fremont, CA (US); and Sung-Nee George Chu, Fremont, CA (US)
Assigned to BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD., Beijing (CN)
Appl. No. 17/615,484
Filed by BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD., Beijing (CN)
PCT Filed May 15, 2020, PCT No. PCT/CN2020/090402
§ 371(c)(1), (2) Date Nov. 30, 2021,
PCT Pub. No. WO2020/238646, PCT Pub. Date Dec. 3, 2020.
Claims priority of application No. 201910483748.4 (CN), filed on May 31, 2019.
Prior Publication US 2022/0238746 A1, Jul. 28, 2022
Int. Cl. H10F 71/00 (2025.01); C30B 29/06 (2006.01); C30B 29/08 (2006.01); H10D 62/10 (2025.01); H10F 10/174 (2025.01)
CPC H10F 71/1212 (2025.01) [C30B 29/06 (2013.01); C30B 29/08 (2013.01); H10D 62/10 (2025.01); H10F 10/174 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A monocrystalline germanium wafer, wherein the monocrystalline germanium wafer contains, as dopant elements, silicon in an atomic concentration of from 3×1014 atoms/cc to 10×1018 atoms/cc, boron in an atomic concentration of from 1×1016 atoms/cc to 10×1018 atoms/cc, and gallium in an atomic concentration of from 1×1016 atoms/cc to 10×1019 atoms/cc, and wherein the monocrystalline germanium wafer has a ratio of the atomic concentration of boron to that of gallium in the range of from 8:1 to 1:240.