| CPC H10F 39/813 (2025.01) [H04N 25/77 (2023.01); H10F 39/18 (2025.01); H10F 39/802 (2025.01); H10F 39/8037 (2025.01); H10F 39/811 (2025.01)] | 20 Claims |
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1. An image sensor, comprising:
a substrate;
a first shared pixel disposed in the substrate and including at least two photodiodes that share a first floating diffusion (FD) area;
a second shared pixel disposed in the substrate adjacent to the first shared pixel in a first direction and including at least two photodiodes that share a second FD area;
a first transistor (TR) set configured to be shared by the first shared pixel and comprising a first reset TR, a first source follower TR, and a first selection TR, which are arranged collinearly along the first direction:
a second TR set configured to be shared by the second shared pixel and comprising a second selection TR, a second source follower TR, and a second reset TR, which are arranged collinearly along the first direction;
a stack structure comprising a doped semiconductor layer and an insulating layer on the doped semiconductor layer, the stack structure disposed outside the first TR set and the second TR set in a plane parallel to an upper surface of the substrate and being positioned at the edge of each of the first TR set and the second TR set; and
a common vertical contact directly connected to a source region of the first selection TR and the second selection TR,
wherein the first TR set and the second TR set are in a mirror symmetry relationship with respect to the common vertical contact, and
wherein the stack structure comprises an isolation area positioned at the edge of each of the first TR set and the second TR set in the first direction, the first reset TR, an equivalent FD area and the isolation area positioned at the edge of the first TR set are arranged in order, and the insulating layer separates the equivalent FD area from the first FD area.
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