| CPC H10F 39/80373 (2025.01) [H10F 39/809 (2025.01)] | 20 Claims |
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1. An imaging device comprising:
a pixel region including an amplifying transistor that includes a first gate and that outputs a signal voltage corresponding to an amount of signal charge;
a first peripheral region including at least one first peripheral transistor including a second gate, the first peripheral region being located outside the pixel region; and
a semiconductor substrate provided with the amplifying transistor and the at least one first peripheral transistor, wherein
a gate length of the second gate of the at least one first peripheral transistor is shorter than a gate length of the first gate of the amplifying transistor, and
when at least one type of impurity that contributes to suppression of transient enhanced diffusion of a conductive impurity is defined as a first specific species, the at least one first peripheral transistor includes a first specific layer located in the semiconductor substrate, the first specific layer containing a conductive impurity and the first specific species.
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