| CPC H10F 39/8033 (2025.01) [H04N 25/77 (2023.01); H04N 25/78 (2023.01); H04N 25/79 (2023.01); H10F 39/182 (2025.01)] | 20 Claims |
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1. A stacked image sensor comprising:
a first semiconductor substrate including a photoelectric conversion region and a floating diffusion area configured to store charges transferred from the photoelectric conversion region;
a color filter and a micro lens on the first semiconductor substrate;
a first insulating layer under the first semiconductor substrate;
a transfer transistor configured to transfer charges from the photoelectric conversion region, wherein a gate of the transfer transistor is in the first insulating layer;
a second semiconductor substrate under the first insulating layer and including first impurities of a first conductivity type, wherein the second semiconductor substrate includes a well region;
a second insulating layer under the second semiconductor substrate;
a metal pad of a floating diffusion node and a gate of a source follower transistor in the second insulating layer; and
a deep contact that is in the first insulating layer and the second semiconductor substrate and electrically connects the floating diffusion area to the metal pad of the floating diffusion node,
wherein at least a portion of the deep contact is in the well region.
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