US 12,336,307 B2
Electronic device comprising a photodiode
Arnaud Tournier, Grenoble (FR); Boris Rodrigues Goncalves, Theys (FR); and Francois Roy, Seyssins (FR)
Assigned to STMicroelectronics (Crolles 2) SAS, Crolles (FR)
Filed by STMicroelectronics (Crolles 2) SAS, Crolles (FR)
Filed on Jun. 23, 2022, as Appl. No. 17/848,315.
Application 17/848,315 is a division of application No. 16/825,298, filed on Mar. 20, 2020, granted, now 11,417,789.
Claims priority of application No. 1903194 (FR), filed on Mar. 27, 2019.
Prior Publication US 2022/0320359 A1, Oct. 6, 2022
Int. Cl. H10F 30/225 (2025.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H10F 30/225 (2025.01) [H10F 39/18 (2025.01); H10F 39/8027 (2025.01); H10F 39/8033 (2025.01); H10F 39/8037 (2025.01); H10F 39/807 (2025.01)] 22 Claims
OG exemplary drawing
 
1. A device, comprising:
a first semiconductor layer having a first conductivity type;
a second semiconductor layer on the first semiconductor layer and having a second conductivity type;
a first semiconductor wall extending through the first semiconductor layer and the second semiconductor layer;
a second semiconductor wall extending through the first semiconductor layer and the second semiconductor layer;
an insulating trench extending into the second semiconductor layer, the insulating trench in direct physical contact with the first semiconductor wall; and
a semiconductor region extending into the second semiconductor layer, spaced from the first semiconductor wall by the insulating trench, and having the second conductivity type, the first semiconductor wall being spaced from the second semiconductor wall by the insulating trench and the semiconductor region.