US 12,336,304 B2
Zinc oxide-crystalline silicon laminated solar cell and preparation method thereof
Dai Qi You, Mianyang (CN); Liu De Xiong, Mianyang (CN); and Wen Cai, Mianyang (CN)
Assigned to Qiyou Dai, Mianyang (CN)
Appl. No. 18/549,675
Filed by Dai Qi You, Sichuan (CN)
PCT Filed Mar. 16, 2023, PCT No. PCT/CN2023/081935
§ 371(c)(1), (2) Date Sep. 8, 2023,
PCT Pub. No. WO2024/001312, PCT Pub. Date Jan. 4, 2024.
Claims priority of application No. 202210745683.8 (CN), filed on Jun. 28, 2022.
Prior Publication US 2024/0322060 A1, Sep. 26, 2024
Int. Cl. H10F 71/10 (2025.01); H10F 10/162 (2025.01); H10F 71/00 (2025.01); H10F 77/20 (2025.01); H10F 77/30 (2025.01)
CPC H10F 10/162 (2025.01) [H10F 71/10 (2025.01); H10F 71/1257 (2025.01); H10F 77/211 (2025.01); H10F 77/315 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A zinc oxide-crystalline silicon laminated solar cell, comprising: a P-type silicon substrate layer; a front surface of the P-type silicon substrate layer being sequentially formed with, from bottom to top, a diffusion layer, an N-type zinc oxide layer, a first passivation layer, and a first antireflection layer; wherein the N-type zinc oxide layer is made of tetrapod-like N-type zinc oxide whisker powder as a raw material; and a back surface of the P-type silicon substrate layer being sequentially formed with, from top to bottom, a second passivation layer and a second antireflection layer; and an electrode, the electrode comprising a front electrode and a back electrode, wherein the front electrode comprises a silver gate electrode; and the back electrode comprises an aluminum gate electrode, and wherein a thickness of the N-type zinc oxide layer is 0.1-50 μm, the first antireflection layer comprises a silicon nitride antireflection layer, and the second antireflection layer comprises a silicon nitride antireflection layer.