US 12,336,302 B1
Vertical device triggered silicon control rectifier
Sagar Premnath Karalkar, Chelmsford, MA (US); Alain François Loiseau, Williston, VT (US); Vibhor Jain, Clifton Park, NY (US); and Wei Liang, South Burlington, VT (US)
Assigned to GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on May 3, 2024, as Appl. No. 18/654,293.
Int. Cl. H10D 89/60 (2025.01)
CPC H10D 89/713 (2025.01) 18 Claims
OG exemplary drawing
 
1. A structure comprising:
a vertical silicon controlled rectifier comprising a diffusion region in a well of a semiconductor substrate;
a vertical triggering device sharing the diffusion region with the vertical silicon controlled rectifier; and
a body contact adjacent to the vertical triggering device and electrically connecting to the well,
wherein the vertical silicon controlled rectifier comprises a base with a first conductivity type, the vertical triggering device comprises a base with a second conductivity type, and the diffusion region comprises the first conductivity type, and
wherein a base of the silicon controller rectifier comprises P—SiGe, a base of the vertical triggering device comprises N—SiGe, the well comprises an n-well and the diffusion region comprises a p-type dopant.