| CPC H10D 89/713 (2025.01) | 20 Claims |
|
1. A semiconductor device, comprising:
a region of semiconductor material comprising:
a top side;
a bottom side opposite to the top side;
a semiconductor substrate;
a first semiconductor region over the semiconductor substrate;
a buried doped region of a first conductivity type in the first semiconductor region; and
a second semiconductor region over the first semiconductor region and the buried doped region;
a first well region of the first conductivity type in the second semiconductor region and electrically coupled to the buried doped region;
a second well region of a second conductivity type opposite to the first conductivity type in the second semiconductor region and having a first peak dopant concentration;
a third well region of the second conductivity type in the second semiconductor region abutting edges of the second well region, wherein:
the third well region is interposed between the first well region and the second well region;
the third well region and the first well region are laterally spaced apart so that a portion of the second semiconductor region is interposed between the third well region and the first well region; and
the third well region has a second peak dopant concentration that is different than the first peak dopant concentration;
a doped anode region of the second conductivity type in the first well region;
a doped cathode region of the first conductivity type in the second well region; and
a doped region of the second conductivity type in the second well region.
|