US 12,336,280 B2
Split stack triple height cell
Guru Prasad, Austin, TX (US)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 7, 2023, as Appl. No. 18/348,430.
Application 18/348,430 is a continuation of application No. 17/148,652, filed on Jan. 14, 2021, granted, now 11,721,698.
Claims priority of provisional application 63/012,304, filed on Apr. 20, 2020.
Prior Publication US 2023/0352486 A1, Nov. 2, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 84/85 (2025.01); G06F 30/392 (2020.01); G06F 117/12 (2020.01); G06F 119/06 (2020.01)
CPC H10D 84/853 (2025.01) [G06F 30/392 (2020.01); G06F 2117/12 (2020.01); G06F 2119/06 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a circuit comprising a first stage having a first plurality of electrical components and a second stage having a second plurality of electrical components, wherein an output of the first stage is an input of the second stage;
a first electrical component of the first plurality of electrical components in a top portion of a first row;
a first electrical component of the second plurality of electrical components in a bottom portion of the first row and a top portion of a second row and across a boundary between the first and second rows;
a second electrical component of the second plurality of electrical components in a top portion of a third row and a bottom portion of the second row and across a boundary between the second and third rows; and
a second electrical component of the first plurality of electrical components is in a bottom portion of the third row.