US 12,336,274 B2
Self-aligned method for vertical recess for 3D device integration
Jeffrey Smith, Clifton Park, NY (US); Daniel Chanemougame, Niskayuna, NY (US); Lars Liebmann, Mechanicsville, NY (US); Paul Gutwin, Williston, VT (US); Subhadeep Kal, Albany, NY (US); Kandabara Tapily, Mechanicsville, NY (US); and Anton Devilliers, Clifton Park, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Aug. 1, 2022, as Appl. No. 17/878,457.
Claims priority of provisional application 63/228,473, filed on Aug. 2, 2021.
Prior Publication US 2023/0036597 A1, Feb. 2, 2023
Int. Cl. H10D 30/67 (2025.01); H01L 21/285 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 88/00 (2025.01)
CPC H10D 84/038 (2025.01) [H01L 21/28518 (2013.01); H10D 30/014 (2025.01); H10D 30/031 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/856 (2025.01); H10D 88/01 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
providing a substrate having a first channel structure formed thereon and a second channel structure formed over the first channel structure;
forming a first sacrificial contact and a second sacrificial contact to cover ends of the first channel structure and the second channel structure, respectively;
covering the first sacrificial contact and the second sacrificial contact with a first fill material;
recessing a portion of the first fill material such that the second sacrificial contact is at least partially uncovered while the first sacrificial contact remains covered;
replacing the second sacrificial contact with a cover spacer so that the end of the second channel structure is covered by the cover spacer;
removing a remaining portion of the first fill material;
removing the first sacrificial contact to uncover the end of the first channel structure;
forming a first source/drain (S/D) contact to cover the end of the first channel structure;
covering the first S/D contact with a second fill material;
removing the cover spacer to uncover the end of the second channel structure; and
forming a second S/D contact at the end of the second channel structure.