US 12,336,273 B2
Method for forming semiconductor structure using fluorine to treat gate stack
Pei Ying Lai, Hsinchu (TW); Chia-Wei Hsu, Taipei (TW); Tsung-Da Lin, Pingtung County (TW); and Chi On Chui, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 31, 2022, as Appl. No. 17/709,766.
Prior Publication US 2023/0317523 A1, Oct. 5, 2023
Int. Cl. H10D 84/03 (2025.01); H10D 84/01 (2025.01); H10D 84/83 (2025.01)
CPC H10D 84/038 (2025.01) [H10D 84/0144 (2025.01); H10D 84/0158 (2025.01); H10D 84/834 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor structure, comprising:
forming a first fin structure over a first region of a substrate and a second fin structure over a second region of the substrate;
forming a first gate dielectric layer around the first fin structure and a second gate dielectric layer around the second fin structure;
forming a barrier layer over the first gate dielectric layer;
treating the substrate with a first fluorine-containing gas;
forming a work function layer over the second gate dielectric layer after treating the substrate with the first fluorine-containing gas;
treating the substrate with a second fluorine-containing gas after forming the work function layer over the second gate dielectric layer; and
forming a first metal fill layer over and in contact with the barrier layer and forming a second metal fill layer over and in contact with the work function layer after treating the substrate with the second fluorine-containing gas.